PART |
Description |
Maker |
CM200TU-12F |
240 x 128 pixel format, CFL Backlight with power harness Trench Gate Design Six IGBTMOD⑩ 200 Amperes/600 Volts Trench Gate Design Six IGBTMOD 200 Amperes/600 Volts Trench Gate Design Six IGBTMOD?/a> 200 Amperes/600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
CM100TU-12F |
Trench Gate Design Six IGBTMOD?/a> 100 Amperes/600 Volts Trench Gate Design Six IGBTMOD⑩ 100 Amperes/600 Volts Trench Gate Design Six IGBTMOD 100 Amperes/600 Volts 240 x 128 pixel format, CFL Backlight with power harness
|
POWEREX[Powerex Power Semiconductors]
|
CM100DU-24F CM100DU-24H |
Trench Gate Design Dual IGBTMOD?/a> 100 Amperes/1200 Volts HIGH POWER SWITCHING USE INSULATED TYPE Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD 100 Amperes/1200 Volts
|
Mitsubishi Electric Semiconductor Powerex Power Semiconductors
|
CM75TU-24F |
Trench Gate Design Six IGBTMOD?/a> 75 Amperes/1200 Volts Trench Gate Design Six IGBTMOD⑩ 75 Amperes/1200 Volts Trench Gate Design Six IGBTMOD 75 Amperes/1200 Volts Trench Gate Design Six IGBTMOD75 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
CM50TU-24F |
Trench Gate Design Six IGBTMOD?/a> 50 Amperes/1200 Volts Trench Gate Design Six IGBTMOD⑩ 50 Amperes/1200 Volts Trench Gate Design Six IGBTMOD50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors] Powerex, Inc.
|
CM300DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 300 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD⑩ 300 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD 300 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp. Microsemi Corporation
|
FGA25N120ANTD |
1200V NPT-Trench IGBT Using Fairchild's proprietary trench design and advanced NPT technology 1200V NPT Trench IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
MIC915 MIC915BMM |
10000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN 10000 SYSTEM GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN Dual 135MHz Low-Power Op Amp
|
Micrel Semiconductor,Inc.
|
M57161L-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V HYBRID IC FOR DRIVING TRENCH-GATE IGBT
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MA9XXXA |
Radiation Hard Advanced Gate Array Design System
|
GEC Plessey Semiconductors
|